naina s emiconductor 1 d-95, sector 63, noida sales@nainasemi.com three features ? easy connections ? excellent power volume ratio ? insulated type voltage ratings (t j = 25 0 c unless otherwise noted) type number voltage code vrrm, max. repetitive peak reverse voltage (v) vrsm, max. repetitive peak reverse voltage 110MDS 80 800 100 1000 120 1200 140 1400 160 1600 thermal and mechanical specifications (ta = 250c unless otherwise noted) parameters maximum operating junction temperature range maximum storage temperature range maximum thermal resistance, junction to case dc operation per module dc operation per junction 120 rect conduction angle per module 120 rect conduction angle per junction maximum thermal resistance, case to heatsink per module, mounting greased mounting torque 10% to heatsink to terminal approximate weight emiconductor ltd. 11 sector 63, noida C 201301, india ? tel: 0120- 4205450 ? fax: 0120 sales@nainasemi.com ? www.nainasemi.com three C phase bridge rectifier mds c unless otherwise noted) vrsm, max. non- repetitive peak reverse voltage (v) irrm max @ tj max (ma) 900 10 1100 1300 1500 1700 (ta = 250c unless otherwise noted) symbol maximum operating junction temperature range t j - 40 to + 150 t stg - 40 to + 150 dc operation per module r th(jc) dc operation per junction 120 rect conduction angle per module 120 rect conduction angle per junction per module, mounting surface smooth, flat and r th(cs) t 11 0mds 4205450 ? fax: 0120 -4273653 mds values units 40 to + 150 0 c 40 to + 150 0 c 0.18 0 c/w 1.07 0.21 1.25 0.03 0 c/w 4 to 6 nm 3 to 4 176 g
naina s emiconductor 2 d-95, sector 63, noida sales@nainasemi.com electrical specifications (t j = 25 0 c unless otherwise noted) parameters conditions maximum dc output current 120 0 rect conduction angle maximum peak one-cycle forward, non-repetitive surge current t = 10ms t = 8.3ms t = 8.3ms t = 10ms maximum i 2 t for fusing t = 8.3ms t = 10ms t = 8.3ms t = 10ms maximum j 2 t for fusing t = 0.1 to 10ms, no voltage reapplied low level value of threshold voltage [ 16.7% * * i high level value of threshold voltage [ i > > i low level value of forward slope resistance [ 16.7% * * i high level value of forward slope resistance [ i > * maximum forward voltage drop i pk = 100a, t rms isolation voltage f = 50hz, t = 1ms, all terminals diode configuration emiconductor ltd. 11 sector 63, noida C 201301, india ? tel: 0120- 4205450 ? fax: 0120 sales@nainasemi.com ? www.nainasemi.com c unless otherwise noted) conditions symbol rect conduction angle , t c = 85 0 c i 0 t = 10ms no voltage reapplied t j = t j max. i fsm t = 8.3ms t = 8.3ms 100% v rrm reapplied t = 10ms t = 8.3ms no voltage reapplied i 2 t t = 10ms t = 8.3ms 100% v rrm reapplied t = 10ms t = 0.1 to 10ms, no voltage reapplied j 2 t 16.7% * * i f(av) < i < * i f(av) ], @ t j max v f(to)1 [ i > > i f(av) ], @ t j max v f(to)2 [ 16.7% * * i f(av) < i < * i f(av) ], @ t j max r 1 i f(av) ], @ t j max r 2 = 100a, t p = 400 s single junction v fm f = 50hz, t = 1ms, all terminals shorted v iso 11 0mds 4205450 ? fax: 0120 -4273653 symbol values units 110 a 950 a 1000 800 840 4500 a 2 s 4100 3200 2900 45000 a 2 s f(to)1 0.81 v f(to)2 0.99 v 4.37 m? 4.64 m? 1.4 v 4000 v
naina s emiconductor 3 d-95, sector 63, noida sales@nainasemi.com emiconductor ltd. 11 sector 63, noida C 201301, india ? tel: 0120- 4205450 ? fax: 0120 sales@nainasemi.com ? www.nainasemi.com all dimensions in mm 11 0mds 4205450 ? fax: 0120 -4273653
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